IRF530STRR

IRF530STRR

IRF530STRR

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

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Technische Details IRF530STRR

Description: MOSFET N-CH 100V 14A D2PAK, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 88W (Tc), Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V.

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