IRF530STRRPBF
verfügbar/auf Bestellung
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Technische Details IRF530STRRPBF
Description: MOSFET N-CH 100V 14A D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: TO-263 (D²Pak), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Power Dissipation (Max): 3.7W (Ta), 88W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V.
Preis IRF530STRRPBF ab 0 EUR bis 0 EUR
IRF530STRRPBF Hersteller: Vishay Semiconductors MOSFET 100V N-CH HEXFET D2-PAK ![]() |
auf Bestellung 789 Stücke ![]() Lieferzeit 14-28 Tag (e) |
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IRF530STRRPBF Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 14A TO263 Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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IRF530STRRPBF Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 14A D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D²Pak) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V ![]() |
auf Bestellung 800 Stücke ![]() Lieferzeit 21-28 Tag (e) |
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IRF530STRRPBF Hersteller: Vishay Siliconix Description: MOSFET N-CH 100V 14A TO263 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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