IRF530STRRPBF

IRF530STRRPBF

Hersteller: Vishay
Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R
sihf530s.pdf sihf530s.pdf
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Technische Details IRF530STRRPBF

Description: MOSFET N-CH 100V 14A D2PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Drain to Source Voltage (Vdss): 100V, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: TO-263 (D²Pak), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Power Dissipation (Max): 3.7W (Ta), 88W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V.

Preis IRF530STRRPBF ab 0 EUR bis 0 EUR

IRF530STRRPBF
IRF530STRRPBF
Hersteller: Vishay Semiconductors
MOSFET 100V N-CH HEXFET D2-PAK
VISH_S_A0011126094_1-2571723.pdf
auf Bestellung 789 Stücke
Lieferzeit 14-28 Tag (e)
IRF530STRRPBF
IRF530STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO263
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
sihf530s.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF530STRRPBF
IRF530STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
sihf530s.pdf
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
IRF530STRRPBF
IRF530STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO263
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
sihf530s.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen