auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 1.23 EUR |
| 1600+ | 1.17 EUR |
| 2400+ | 1.07 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF610STRLPBF Vishay
Description: MOSFET N-CH 200V 3.3A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V, Power Dissipation (Max): 3W (Ta), 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.
Weitere Produktangebote IRF610STRLPBF nach Preis ab 1.08 EUR bis 4.03 EUR
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IRF610STRLPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF610STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 3.3A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Power Dissipation (Max): 3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
auf Bestellung 677 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF610STRLPBF | Hersteller : Vishay Semiconductors |
MOSFET N-Chan 200V 3.3 Amp |
auf Bestellung 778 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF610STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF610STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 3.3A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRF610STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.3A Pulsed drain current: 10A Power dissipation: 36W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF610STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 3.3A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Power Dissipation (Max): 3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRF610STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3.3A; Idm: 10A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3.3A Pulsed drain current: 10A Power dissipation: 36W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |