IRF614STRRPBF

IRF614STRRPBF

IRF614STRRPBF

Hersteller: Vishay Semiconductors
MOSFET N-Chan 250V 2.7 Amp
sihf614s-1768553.pdf
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Technische Details IRF614STRRPBF

Description: MOSFET N-CH 250V 2.7A D2PAK, Part Status: Active, Supplier Device Package: D²PAK (TO-263), Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

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IRF614STRRPBF
IRF614STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.7A D2PAK
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
sihf614s.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen