IRF620STRRPBF

IRF620STRRPBF

IRF620STRRPBF

Hersteller: Vishay Semiconductors
MOSFET N-Chan 200V 5.2 Amp
sihf620s-1768785.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 682 Stücke
Lieferzeit 14-28 Tag (e)
10+ 5.67 EUR
11+ 5.1 EUR
100+ 4.11 EUR
800+ 3.04 EUR

Technische Details IRF620STRRPBF

Description: MOSFET N-CH 200V 5.2A D2PAK, Part Status: Active, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Supplier Device Package: D2PAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 3W (Ta), 50W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V, Drive Voltage (Max Rds On, Min Rds On): 10V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 200V, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $).

Preis IRF620STRRPBF ab 3.04 EUR bis 5.67 EUR

IRF620STRRPBF
IRF620STRRPBF
Hersteller: Vishay
Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK T/R
sihf620s.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF620STRRPBF
Hersteller: Vishay
Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK T/R
sihf620s.pdf sihf620s.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF620STRRPBF
IRF620STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Part Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
sihf620s.pdf
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
IRF620STRRPBF
IRF620STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
sihf620s.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRF620STRRPBF
IRF620STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.2A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
sihf620s.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen