IRF630STRLPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 200V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.15 EUR |
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Technische Details IRF630STRLPBF Vishay Siliconix
Description: MOSFET N-CH 200V 9A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V, Power Dissipation (Max): 3W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote IRF630STRLPBF nach Preis ab 1.13 EUR bis 3.19 EUR
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IRF630STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
auf Bestellung 1196 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF630STRLPBF | Hersteller : Vishay Semiconductors |
MOSFETs N-Chan 200V 9.0 Amp |
auf Bestellung 779 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF630STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
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IRF630STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
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IRF630STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRF630STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Case: D2PAK; TO263 Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 74W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 36A Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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| IRF630STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 74W Case: D2PAK; TO263 Drain-source voltage: 200V Drain current: 5.7A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 74W Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 43nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 36A |
Produkt ist nicht verfügbar |