auf Bestellung 514 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 2.7 EUR |
| 100+ | 2.48 EUR |
| 250+ | 2.3 EUR |
| 500+ | 2.13 EUR |
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Technische Details IRF640PBF-BE3 Vishay
Description: MOSFET N-CH 200V 18A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRF640PBF-BE3 nach Preis ab 2.54 EUR bis 4.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF640PBF-BE3 | Hersteller : Vishay / Siliconix |
 MOSFET 200V N-CH HEXFET |
auf Bestellung 6243 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF640PBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 18A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 154 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF640PBF-BE3 | Hersteller : VISHAY |
Description: VISHAY - IRF640PBF-BE3 - MOSFET, N-CH, 200V, 18A, TO-220AB tariffCode: 85412100 Transistormontage: Through Hole Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 18A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: IRF640 Series productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.18ohm directShipCharge: 25 SVHC: Lead |
auf Bestellung 514 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640PBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| IRF640PBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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| IRF640PBF-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IRF640PBF-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |