auf Bestellung 307 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 2.31 EUR |
| 75+ | 1.97 EUR |
| 100+ | 1.71 EUR |
| 250+ | 1.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF640STRRPBF Vishay
Description: MOSFET N-CH 200V 18A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 3.1W (Ta), 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRF640STRRPBF nach Preis ab 1.21 EUR bis 7.15 EUR
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IRF640STRRPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 307 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF640STRRPBF | Hersteller : Vishay Semiconductors |
MOSFET N-Chan 200V 18 Amp |
auf Bestellung 1158 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF640STRRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 18A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 661 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF640STRRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRF640STRRPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRF640STRRPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRF640STRRPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 18A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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| IRF640STRRPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |