IRF7304PBF International Rectifier/Infineon
Hersteller: International Rectifier/Infineon2P-канальний ПТ; Udss, В = 20; Id = 4,3 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 610 @ 15; Qg, нКл = 22 @ 4,5 В; Rds = 90 мОм @ 2,2 A; 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 0,7 В @ 250 мкА; SOICN-8
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.7 EUR |
| 10+ | 0.96 EUR |
| 100+ | 0.84 EUR |
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Technische Details IRF7304PBF International Rectifier/Infineon
Description: MOSFET 2P-CH 20V 4.3A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 8-SO.
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IRF7304PBF Транзисторы HEXFET |
auf Bestellung 96 Stücke: Lieferzeit 7-21 Tag (e) |
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IRF7304PBF | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 20V 4.3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
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IRF7304PBF | Hersteller : Infineon Technologies |
MOSFET DUAL -20V P-CH 12 VGS MAX |
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