IRF7307PBF International Rectifier/Infineon
Hersteller: International Rectifier/InfineonТранзистор польовий N+P; Udss, В = 20; Id = 5,2 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 660 @ 15; Qg, нКл = 20 @ 4,5 В; Rds = 50 мОм @ 2,6 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 0,7 В @ 250 мкА; td(on)+tr = 9; td(off)+tf = 32; Id2 = 4,
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 0.92 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.7 EUR |
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Technische Details IRF7307PBF International Rectifier/Infineon
Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 700mV @ 250µA, Supplier Device Package: 8-SO.
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IRF7307PBF Produktcode: 28597 |
Hersteller : IR |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: 20 Idd,A: 05.07.2015 Rds(on), Ohm: 01.05.2000 Ciss, pF/Qg, nC: 660/20 Bem.: N+P (4.7A) JHGF: SMD |
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IRF7307PBF | Hersteller : Infineon Technologies |
Description: MOSFET N/P-CH 20V 5.2A/4.3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A, 4.3A Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SO |
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IRF7307PBF | Hersteller : Infineon Technologies |
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