IRF7341QTRPBF Infineon Technologies

Description: MOSFET 2N-CH 55V 5.1A 8-SOIC, Packaging: Cut Tape (CT), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W, Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 5.1A, Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 25V, Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: 8-SO, Part Status: Obsolete.