Technische Details IRF7526D1PBF IOR
Description: MOSFET P-CH 30V 2A MICRO8, Packaging: Tube, Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote IRF7526D1PBF
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IRF7526D1PBF | Hersteller : Infineon Technologies |
 Trans MOSFET P-CH Si 30V 2A 8-Pin Micro |
Produkt ist nicht verfügbar |
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IRF7526D1PBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 30V 2A MICRO8 Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.2A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: Micro8™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
Produkt ist nicht verfügbar |