Technische Details IRF7555TRPBF IRF
Description: MOSFET 2P-CH 20V 4.3A MICRO8, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.25W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V, Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Micro8™, Part Status: Obsolete.
Weitere Produktangebote IRF7555TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRF7555TRPBF | Hersteller : IOR |
 |
auf Bestellung 32500 Stücke: Lieferzeit 21-28 Tag (e) |
||
 |
IRF7555TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET P-CH Si 20V 4.3A 8-Pin Micro T/R |
Produkt ist nicht verfügbar |
|
 |
IRF7555TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2P-CH 20V 4.3A MICRO8 Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro8™ Part Status: Obsolete |
Produkt ist nicht verfügbar |