Technische Details IRF7807D1 IOR
Description: MOSFET N-CH 30V 8.3A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V.
Weitere Produktangebote IRF7807D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRF7807D1 | Hersteller : IOR |
 09+ SO-8 |
auf Bestellung 1129 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRF7807D1 | Hersteller : IR |
SO-8 |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7807D1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 8.3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V |
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