IRF830ALPBF VISHAY
Hersteller: VISHAYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.49 EUR |
| 54+ | 1.34 EUR |
| 66+ | 1.09 EUR |
| 70+ | 1.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF830ALPBF VISHAY
Description: MOSFET N-CH 500V 5A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V, Power Dissipation (Max): 3.1W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V.
Weitere Produktangebote IRF830ALPBF nach Preis ab 0.99 EUR bis 5.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IRF830ALPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 998 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
 |
IRF830ALPBF | Hersteller : Vishay Semiconductors |
MOSFET N-Chan 500V 5.0 Amp |
auf Bestellung 43 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
 |
IRF830ALPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
IRF830ALPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
IRF830ALPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
IRF830ALPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 5A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
Produkt ist nicht verfügbar |