IRF830ASTRLPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 500V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
auf Bestellung 8800 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 3.08 EUR |
| 1600+ | 2.61 EUR |
| 2400+ | 2.48 EUR |
| 5600+ | 2.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF830ASTRLPBF Vishay Siliconix
Description: MOSFET N-CH 500V 5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V.
Weitere Produktangebote IRF830ASTRLPBF nach Preis ab 2.29 EUR bis 5.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRF830ASTRLPBF | Hersteller : Vishay Semiconductors |
MOSFET 500V N-CH HEXFET D2-PA |
auf Bestellung 234 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
IRF830ASTRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
auf Bestellung 9354 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||||
 |
IRF830ASTRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
IRF830ASTRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
IRF830ASTRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
IRF830ASTRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
| IRF830ASTRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
| IRF830ASTRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |