IRF840A
Hersteller: транзистор HEXFET Power MOSFET. N-Channel VDS = 500V, RDS(on) = 0.85 Ohm, ID = 8.0A TO-220
auf Bestellung 7 Stücke:
Lieferzeit 7-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF840A
Description: MOSFET N-CH 500V 8A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V.
Weitere Produktangebote IRF840A
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IRF840A | Hersteller : Vishay |
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|
 |
IRF840A | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 8A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1018 pF @ 25 V |
Produkt ist nicht verfügbar |
|
 |
IRF840A | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT IRF840APBF |
Produkt ist nicht verfügbar |