IRF9540SPBF VISHAY
Hersteller: VISHAYCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 150W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Type of transistor: P-MOSFET
Power dissipation: 150W
Polarisation: unipolar
Drain current: -13A
Gate charge: 61nC
Kind of channel: enhanced
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Drain-source voltage: -100V
auf Bestellung 1156 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.32 EUR |
| 61+ | 1.19 EUR |
| 68+ | 1.06 EUR |
| 80+ | 0.9 EUR |
| 84+ | 0.86 EUR |
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Technische Details IRF9540SPBF VISHAY
Description: MOSFET P-CH 100V 19A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V, Power Dissipation (Max): 3.7W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRF9540SPBF nach Preis ab 0.86 EUR bis 7.15 EUR
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IRF9540SPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 150W; D2PAK,TO263 Case: D2PAK; TO263 Mounting: SMD Kind of package: tube Type of transistor: P-MOSFET Power dissipation: 150W Polarisation: unipolar Drain current: -13A Gate charge: 61nC Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 0.2Ω Drain-source voltage: -100V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1156 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF9540SPBF | Hersteller : Vishay |
Trans MOSFET P-CH 100V 19A 3-Pin(2+Tab) D2PAK |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9540SPBF | Hersteller : Vishay |
Trans MOSFET P-CH 100V 19A 3-Pin(2+Tab) D2PAK |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9540SPBF | Hersteller : Vishay Semiconductors | MOSFET 100V P-CH HEXFET MOSFET |
auf Bestellung 1289 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF9540SPBF | Hersteller : VISHAY |
Description: VISHAY - IRF9540SPBF - Leistungs-MOSFET, p-Kanal, 100 V, 19 A, 0.2 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 19A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.2ohm |
auf Bestellung 1089 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9540SPBF | Hersteller : Vishay |
Trans MOSFET P-CH 100V 19A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRF9540SPBF | Hersteller : Vishay |
Trans MOSFET P-CH 100V 19A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRF9540SPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 19A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |