IRF9630SPBF VISHAY
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 227 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
60+ | 1.2 EUR |
66+ | 1.09 EUR |
75+ | 0.96 EUR |
87+ | 0.83 EUR |
91+ | 0.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRF9630SPBF VISHAY
Description: MOSFET P-CH 200V 6.5A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V, Power Dissipation (Max): 3W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.
Weitere Produktangebote IRF9630SPBF nach Preis ab 0.79 EUR bis 6.73 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRF9630SPBF | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -4A; 74W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -4A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9630SPBF | Hersteller : Vishay | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9630SPBF | Hersteller : Vishay | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9630SPBF | Hersteller : Vishay | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 |
auf Bestellung 448 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9630SPBF | Hersteller : Vishay | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 |
auf Bestellung 448 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9630SPBF | Hersteller : Vishay Semiconductors | MOSFET 200V P-CH HEXFET MOSFET |
auf Bestellung 5397 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF9630SPBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 6.5A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
auf Bestellung 3796 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF9630SPBF | Hersteller : VISHAY |
Description: VISHAY - IRF9630SPBF - Leistungs-MOSFET, p-Kanal, 200 V, 6.5 A, 0.8 ohm, TO-263AB, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 74W Bauform - Transistor: TO-263AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.8ohm |
auf Bestellung 3265 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9630SPBF | Hersteller : Vishay | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF9630SPBF Produktcode: 176782 |
Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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IRF9630SPBF | Hersteller : Vishay | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 |
Produkt ist nicht verfügbar |