IRFB11N50A Vishay
Hersteller: VishayN-MOSFET 500V 11A 170W 0.520Ω IRFB11N50A TIRFB11n50a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 3.23 EUR |
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Technische Details IRFB11N50A Vishay
Description: MOSFET N-CH 500V 11A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V.
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IRFB11N50A | Hersteller : Vishay |
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IRFB11N50A | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 11A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFB11N50A | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT IRFB11N50APBF |
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