auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 2.2 EUR |
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Technische Details IRFB11N50APBF-BE3 Vishay
Description: MOSFET N-CH 500V 11A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V.
Weitere Produktangebote IRFB11N50APBF-BE3 nach Preis ab 2.62 EUR bis 10.12 EUR
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IRFB11N50APBF-BE3 | Hersteller : Vishay / Siliconix |
 MOSFET 500V N-CH HEXFET |
auf Bestellung 2899 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFB11N50APBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 11A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6.6A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V |
auf Bestellung 2190 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRFB11N50APBF-BE3 | Hersteller : Vishay |
Транз. Пол. БМ TO220AB N-Channel Udss=500V; Id=11A; Rds=0,52Ohm Pd=170W |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB11N50APBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |