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IRFB23N15DPBF

IRFB23N15DPBF Infineon Technologies

irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140 Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 32556 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
411+1.75 EUR
Mindestbestellmenge: 411
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Technische Details IRFB23N15DPBF Infineon Technologies

Description: MOSFET N-CH 150V 23A TO220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V, Power Dissipation (Max): 3.8W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.

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IRFB23N15DPBF
Produktcode: 161319 		irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140 Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IRFB23N15DPBF IRFB23N15DPBF Hersteller : Infineon Technologies irfb23n15dpbf.pdf Trans MOSFET N-CH 150V 23A 3-Pin(3+Tab) TO-220AB Tube
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IRFB23N15DPBF IRFB23N15DPBF Hersteller : Infineon Technologies irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140 Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
IRFB23N15DPBF IRFB23N15DPBF Hersteller : Infineon Technologies Infineon_IRFS23N15D_DataSheet_v01_01_EN-3166421.pdf MOSFET MOSFT 150V 23A 90mOhm 37nC
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