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IRFBC20SPBF

IRFBC20SPBF VISHAY


IRFBC20SPBF.pdf Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 50W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
auf Bestellung 25 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
25+2.86 EUR
Mindestbestellmenge: 25
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Technische Details IRFBC20SPBF VISHAY

Description: MOSFET N-CH 600V 2.2A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.

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IRFBC20SPBF IRFBC20SPBF Hersteller : VISHAY IRFBC20SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; 50W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+2.86 EUR
56+ 1.27 EUR
Mindestbestellmenge: 25
IRFBC20SPBF IRFBC20SPBF Hersteller : Vishay Semiconductors MOSFET 600V N-CH HEXFET D2-PA
auf Bestellung 82 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.92 EUR
10+ 6.21 EUR
100+ 5.02 EUR
250+ 4.47 EUR
500+ 3.87 EUR
1000+ 3.28 EUR
Mindestbestellmenge: 8
IRFBC20SPBF
auf Bestellung 88000 Stücke:
Lieferzeit 18-25 Tag (e)
IRFBC20SPBF IRFBC20SPBF Hersteller : Vishay sihfbc20s.pdf Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IRFBC20SPBF IRFBC20SPBF Hersteller : Vishay 91107.pdf Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IRFBC20SPBF IRFBC20SPBF Hersteller : Vishay Siliconix Description: MOSFET N-CH 600V 2.2A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar