IRFBC20STRLPBF

IRFBC20STRLPBF

IRFBC20STRLPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2.2A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)

91107.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 388 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.77 EUR
10+ 6.98 EUR
100+ 5.61 EUR

Technische Details IRFBC20STRLPBF

Description: MOSFET N-CH 600V 2.2A D2PAK, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: D²PAK (TO-263), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.

Preis IRFBC20STRLPBF ab 5.61 EUR bis 7.9 EUR

IRFBC20STRLPBF
IRFBC20STRLPBF
Hersteller: Vishay Semiconductors
MOSFET 600V N-CH HEXFET D2-PA
sihfbc20s-1768417.pdf
auf Bestellung 650 Stücke
Lieferzeit 14-28 Tag (e)
7+ 7.9 EUR
10+ 7.12 EUR
25+ 7.07 EUR
100+ 5.72 EUR
IRFBC20STRLPBF
IRFBC20STRLPBF
Hersteller: Vishay
Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) D2PAK T/R
sihfbc20s.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
IRFBC20STRLPBF
IRFBC20STRLPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 2.2A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
91107.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen