IRFBC30ASPBF

IRFBC30ASPBF Vishay Semiconductors


Hersteller: Vishay Semiconductors
MOSFET N-Chan 600V 3.6 Amp
auf Bestellung 1347 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.65 EUR
14+ 3.93 EUR
100+ 3.38 EUR
500+ 3.15 EUR
Mindestbestellmenge: 12
Produktrezensionen
Produktbewertung abgeben

Technische Details IRFBC30ASPBF Vishay Semiconductors

Description: MOSFET N-CH 600V 3.6A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.

Weitere Produktangebote IRFBC30ASPBF nach Preis ab 2.29 EUR bis 5.1 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRFBC30ASPBF IRFBC30ASPBF Hersteller : Vishay Siliconix Description: MOSFET N-CH 600V 3.6A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 2169 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.1 EUR
50+ 4.08 EUR
100+ 3.36 EUR
500+ 2.84 EUR
1000+ 2.41 EUR
2000+ 2.29 EUR
Mindestbestellmenge: 6
IRFBC30ASPBF IRFBC30ASPBF Hersteller : Vishay sihfbc30.pdf Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) D2PAK
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
IRFBC30ASPBF IRFBC30ASPBF Hersteller : Vishay sihfbc30.pdf Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IRFBC30ASPBF IRFBC30ASPBF Hersteller : Vishay sihfbc30.pdf Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
IRFBC30ASPBF Hersteller : VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.6A; Idm: 14A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 14A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRFBC30ASPBF Hersteller : VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.6A; Idm: 14A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 14A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar