auf Bestellung 709 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.12 EUR |
| 10+ | 5.98 EUR |
| 25+ | 5.67 EUR |
| 100+ | 4.84 EUR |
| 250+ | 4.58 EUR |
| 500+ | 4.32 EUR |
| 1000+ | 3.67 EUR |
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Technische Details IRFBC30SPBF Vishay Semiconductors
Description: MOSFET N-CH 600V 3.6A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V, Power Dissipation (Max): 3.1W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V.
Weitere Produktangebote IRFBC30SPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFBC30SPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRFBC30SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| IRFBC30SPBF | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.6A; Idm: 14A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.6A Pulsed drain current: 14A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 2.2Ω Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFBC30SPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 3.6A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2.2A, 10V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRFBC30SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.6A; Idm: 14A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.6A Pulsed drain current: 14A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 2.2Ω Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |