IRFBC40ASPBF VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; 125W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 3.9A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; 125W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Kind of package: tube
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 600V
Drain current: 3.9A
On-state resistance: 1.2Ω
Type of transistor: N-MOSFET
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.1 EUR |
38+ | 1.89 EUR |
43+ | 1.67 EUR |
50+ | 1.46 EUR |
53+ | 1.37 EUR |
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Technische Details IRFBC40ASPBF VISHAY
Description: MOSFET N-CH 600V 6.2A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V.
Weitere Produktangebote IRFBC40ASPBF nach Preis ab 1.37 EUR bis 10.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRFBC40ASPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.9A; 125W; D2PAK,TO263 Case: D2PAK; TO263 Mounting: SMD Kind of package: tube Power dissipation: 125W Polarisation: unipolar Gate charge: 42nC Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 600V Drain current: 3.9A On-state resistance: 1.2Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBC40ASPBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 362 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBC40ASPBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 362 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBC40ASPBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBC40ASPBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 700 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBC40ASPBF | Hersteller : Vishay Semiconductors | MOSFET N-Chan 600V 6.2 Amp |
auf Bestellung 497 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFBC40ASPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 6.2A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V |
auf Bestellung 147 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFBC40ASPBF | Hersteller : Vishay | Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK |
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