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IRFBC40ASTRLPBF

IRFBC40ASTRLPBF Vishay


sihfbc40.pdf Hersteller: Vishay
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 793 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
121+1.31 EUR
123+ 1.24 EUR
125+ 1.18 EUR
127+ 1.12 EUR
250+ 1.05 EUR
500+ 0.99 EUR
Mindestbestellmenge: 121
Produktrezensionen
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Technische Details IRFBC40ASTRLPBF Vishay

Description: MOSFET N-CH 600V 6.2A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V.

Weitere Produktangebote IRFBC40ASTRLPBF nach Preis ab 0.95 EUR bis 10.32 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRFBC40ASTRLPBF IRFBC40ASTRLPBF Hersteller : Vishay sihfbc40.pdf Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 793 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
99+1.6 EUR
121+ 1.26 EUR
123+ 1.2 EUR
125+ 1.13 EUR
127+ 1.07 EUR
250+ 1.01 EUR
500+ 0.95 EUR
Mindestbestellmenge: 99
IRFBC40ASTRLPBF IRFBC40ASTRLPBF Hersteller : Vishay sihfbc40.pdf Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
800+2.46 EUR
Mindestbestellmenge: 800
IRFBC40ASTRLPBF IRFBC40ASTRLPBF Hersteller : Vishay Siliconix sihfbc40.pdf Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
auf Bestellung 600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.27 EUR
10+ 8.63 EUR
100+ 6.98 EUR
Mindestbestellmenge: 3
IRFBC40ASTRLPBF IRFBC40ASTRLPBF Hersteller : Vishay Semiconductors sihfbc40.pdf MOSFET N-Chan 600V 6.2 Amp
auf Bestellung 37 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+10.32 EUR
10+ 8.68 EUR
25+ 8.19 EUR
100+ 7.02 EUR
250+ 6.63 EUR
500+ 6.24 EUR
800+ 5.54 EUR
Mindestbestellmenge: 6
IRFBC40ASTRLPBF IRFBC40ASTRLPBF Hersteller : Vishay sihfbc40.pdf Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IRFBC40ASTRLPBF IRFBC40ASTRLPBF Hersteller : Vishay sihfbc40.pdf Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
IRFBC40ASTRLPBF Hersteller : VISHAY sihfbc40.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
IRFBC40ASTRLPBF IRFBC40ASTRLPBF Hersteller : Vishay Siliconix sihfbc40.pdf Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
Produkt ist nicht verfügbar
IRFBC40ASTRLPBF Hersteller : VISHAY sihfbc40.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 25A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar