IRFBC40STRLPBF Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
auf Bestellung 796 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 10.27 EUR |
| 10+ | 8.63 EUR |
| 100+ | 6.98 EUR |
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Technische Details IRFBC40STRLPBF Vishay Siliconix
Description: MOSFET N-CH 600V 6.2A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V, Power Dissipation (Max): 3.1W (Ta), 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Weitere Produktangebote IRFBC40STRLPBF nach Preis ab 5.54 EUR bis 10.35 EUR
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IRFBC40STRLPBF | Hersteller : Vishay Semiconductors |
MOSFET N-Chan 600V 6.2 Amp |
auf Bestellung 800 Stücke: Lieferzeit 14-28 Tag (e) |
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| IRFBC40STRLPBF | Hersteller : IR |
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auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFBC40STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRFBC40STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRFBC40STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRFBC40STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 130W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 130W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 600V Drain current: 6.2A On-state resistance: 1.2Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRFBC40STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 6.2A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V Power Dissipation (Max): 3.1W (Ta), 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IRFBC40STRLPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 25A; 130W Mounting: SMD Case: D2PAK; TO263 Kind of package: reel; tape Power dissipation: 130W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 25A Drain-source voltage: 600V Drain current: 6.2A On-state resistance: 1.2Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |