IRFBE30SPBF VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
31+ | 2.37 EUR |
34+ | 2.14 EUR |
42+ | 1.73 EUR |
44+ | 1.63 EUR |
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Technische Details IRFBE30SPBF VISHAY
Description: MOSFET N-CH 800V 4.1A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V.
Weitere Produktangebote IRFBE30SPBF nach Preis ab 1.59 EUR bis 7.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFBE30SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 74 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay | Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 224 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay | Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay | Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay Semiconductors | MOSFET N-Chan 800V 4.1 Amp |
auf Bestellung 853 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay | Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Hersteller : VISHAY | Description: VISHAY - IRFBE30SPBF - MOSFET, N D2-PAK 800V 4,1A |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFBE30SPBF | Hersteller : Vishay | Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRFBE30SPBF | Hersteller : Vishay | Trans MOSFET N-CH 800V 4.1A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRFBE30SPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 4.1A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
Produkt ist nicht verfügbar |