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Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 5.82 EUR |
| 13+ | 4.21 EUR |
| 1000+ | 3.98 EUR |
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Technische Details IRFBF30PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 900V 3.6A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote IRFBF30PBF-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRFBF30PBF-BE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 900V 3.6A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRFBF30PBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 900V 3.6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |