auf Bestellung 21826 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.95 EUR |
| 16+ | 3.46 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.02 EUR |
| 5000+ | 2.01 EUR |
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Technische Details IRFBG20PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 1000V 1.4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V.
Weitere Produktangebote IRFBG20PBF-BE3 nach Preis ab 2.01 EUR bis 4.24 EUR
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IRFBG20PBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 1000V 1.4A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 11Ohm @ 840mA, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V |
auf Bestellung 1770 Stücke: Lieferzeit 21-28 Tag (e) |
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| IRFBG20PBF-BE3 | Hersteller : Vishay |
Surface Mount Fast Switching, Low Resistance Power MOSFET |
Produkt ist nicht verfügbar |
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| IRFBG20PBF-BE3 | Hersteller : Vishay |
Surface Mount Fast Switching, Low Resistance Power MOSFET |
Produkt ist nicht verfügbar |
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| IRFBG20PBF-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 5.6A; 54W; TO220AB Mounting: THT Kind of package: tube Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 5.6A Drain-source voltage: 1kV Drain current: 1.4A On-state resistance: 11Ω Type of transistor: N-MOSFET Case: TO220AB Power dissipation: 54W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IRFBG20PBF-BE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 1.4A; Idm: 5.6A; 54W; TO220AB Mounting: THT Kind of package: tube Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 5.6A Drain-source voltage: 1kV Drain current: 1.4A On-state resistance: 11Ω Type of transistor: N-MOSFET Case: TO220AB Power dissipation: 54W Polarisation: unipolar |
Produkt ist nicht verfügbar |