IRFD220 Harris Corporation
Hersteller: Harris Corporation
Description: 0.8A 200V 0.800 OHM N-CHANNEL
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 480mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
Description: 0.8A 200V 0.800 OHM N-CHANNEL
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 480mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-DIP, Hexdip, HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
auf Bestellung 913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
579+ | 0.85 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFD220 Harris Corporation
Description: 0.8A 200V 0.800 OHM N-CHANNEL, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Rds On (Max) @ Id, Vgs: 800mOhm @ 480mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-DIP, Hexdip, HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.
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