IRFD9120 Harris Corporation
Hersteller: Harris CorporationDescription: MOSFET P-CH 100V 1A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 41147 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 325+ | 2.21 EUR |
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Technische Details IRFD9120 Harris Corporation
Description: MOSFET P-CH 100V 1A 4DIP, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V.
Weitere Produktangebote IRFD9120 nach Preis ab 1.24 EUR bis 1.24 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
| IRFD9120 | Hersteller : Siliconix |
Transistor P-Channel MOSFET; 100V; 20V; 600mOhm; 1A; 1,3W; -55°C ~ 175°C; IRFD9120 TIRFD9120 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRFD9120 | Hersteller : Siliconix |
Transistor P-Channel MOSFET; 100V; 20V; 600mOhm; 1A; 1,3W; -55°C ~ 175°C; IRFD9120 TIRFD9120 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFD9120 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 1A 4-Pin HVMDIP |
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IRFD9120 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 1A 4DIP Packaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFD9120 | Hersteller : Vishay / Siliconix |
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