IRFD9210 Vishay
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 1.34 EUR |
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Technische Details IRFD9210 Vishay
Description: MOSFET P-CH 200V 400MA 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRFD9210
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFD9210 Produktcode: 155079 |
Hersteller : Vishay |
 Transistoren > Transistoren P-Kanal-FeldGehäuse: HVMDIP Uds,V: 200 V Id,A: 0,4 A Rds(on),Om: 3 Ohm Ciss, pF/Qg, nC: 170/8,9 /: THT |
Produkt ist nicht verfügbar
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IRFD9210 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 400MA 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFD9210 | Hersteller : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 844-IRFD9210PBF |
Produkt ist nicht verfügbar |