auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 211+ | 0.75 EUR |
| 223+ | 0.68 EUR |
| 250+ | 0.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFD9210PBF Vishay
Description: MOSFET P-CH 200V 400MA 4DIP, Packaging: Bulk, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 4-HVMDIP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRFD9210PBF nach Preis ab 0.46 EUR bis 3.98 EUR
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IRFD9210PBF | Hersteller : Vishay |
 Trans MOSFET P-CH 200V 0.4A 4-Pin HVMDIP |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9210PBF | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -250mA Power dissipation: 1W Case: DIP4 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 8.9nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2204 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFD9210PBF | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -0.25A; 1W; DIP4 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -250mA Power dissipation: 1W Case: DIP4 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 8.9nC Kind of channel: enhanced |
auf Bestellung 2204 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 400MA 4DIP Packaging: Bulk Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 240mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 4-HVMDIP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 6225 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay / Siliconix |
MOSFET 200V P-CH HEXFET MOSFET |
auf Bestellung 2846 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 0.4A 4-Pin HVMDIP |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD9210PBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 0.4A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |