IRFF211

IRFF211

IRFF211

Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Supplier Device Package: TO-205AF (TO-39)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 15W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active

HRISSD65-1.pdf?t.download=true&u=5oefqw
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1043 Stücke
Lieferzeit 21-28 Tag (e)
282+ 2.6 EUR

Technische Details IRFF211

Description: N-CHANNEL POWER MOSFET, Supplier Device Package: TO-205AF (TO-39), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 15W (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.25A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AF Metal Can, Packaging: Bulk, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active.

Preis IRFF211 ab 2.6 EUR bis 2.6 EUR

IRFF211
Hersteller: HARRIS

HRISSD65-1.pdf?t.download=true&u=5oefqw
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HRISSD65-1.pdf?t.download=true&u=5oefqw
11000 Stücke