IRFF223

IRFF223

IRFF223

Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AF Metal Can
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-205AF (TO-39)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)

HRISSD66-1.pdf?t.download=true&u=5oefqw
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 1395 Stücke
Lieferzeit 21-28 Tag (e)
282+ 2.73 EUR

Technische Details IRFF223

Description: N-CHANNEL POWER MOSFET, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-205AF Metal Can, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-205AF (TO-39), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 20W (Tc).

Preis IRFF223 ab 2.73 EUR bis 2.73 EUR

IRFF223
Hersteller:
CAN
HRISSD66-1.pdf?t.download=true&u=5oefqw
165 Stücke
IRFF223
Hersteller: HAR
TO-39;
HRISSD66-1.pdf?t.download=true&u=5oefqw
20 Stücke
IRFF223
Hersteller:
CAN
HRISSD66-1.pdf?t.download=true&u=5oefqw
2697 Stücke
IRFF223
IRFF223
Hersteller: International Rectifier
Description: 3.0A, 150V, 1.2 OHM, N-CHANNEL P
Part Status: Active
Packaging: Bulk
HRISSD66-1.pdf?t.download=true&u=5oefqw
auf Bestellung 422 Stücke
Lieferzeit 21-28 Tag (e)