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IRFH7188TRPBF

IRFH7188TRPBF Infineon / IR


irfh7188pbf-1227297.pdf Hersteller: Infineon / IR
MOSFET HEXFET 100V N CHANNEL
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Technische Details IRFH7188TRPBF Infineon / IR

Description: MOSFET N-CH 100V 18A/105A PQFN, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 132W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 150µA, Supplier Device Package: PQFN (5x6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V.

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IRFH7188TRPBF Hersteller : International Rectifier INFN-S-A0002298760-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 18A/105A PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 150µA
Supplier Device Package: PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2116 pF @ 50 V
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