Produkte > VISHAY > IRFI730G

IRFI730G Vishay


91153.pdf Hersteller: Vishay
N-MOSFET 400V 3.7A 35W IRFI730G Vishay TIRFI730g
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+1.85 EUR
Mindestbestellmenge: 20
Produktrezensionen
Produktbewertung abgeben

Technische Details IRFI730G Vishay

Description: MOSFET N-CH 400V 3.7A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.1A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.

Weitere Produktangebote IRFI730G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRFI730G IRFI730G Hersteller : Vishay Siliconix 91153.pdf Description: MOSFET N-CH 400V 3.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.1A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar