IRFI830GPBF VISHAY
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP
Mounting: THT
Drain-source voltage: 500V
Drain current: 2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP
Mounting: THT
Drain-source voltage: 500V
Drain current: 2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
55+ | 1.32 EUR |
61+ | 1.19 EUR |
69+ | 1.04 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
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Technische Details IRFI830GPBF VISHAY
Description: MOSFET N-CH 500V 3.1A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V.
Weitere Produktangebote IRFI830GPBF nach Preis ab 0.89 EUR bis 4.16 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFI830GPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2A; 35W; TO220FP Mounting: THT Drain-source voltage: 500V Drain current: 2A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Kind of package: tube Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220FP Anzahl je Verpackung: 1 Stücke |
auf Bestellung 498 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFI830GPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 3.1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.9A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V |
auf Bestellung 783 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFI830GPBF | Hersteller : Vishay Semiconductors | MOSFET RECOMMENDED ALT IRFI830G |
auf Bestellung 2291 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFI830GPBF | Hersteller : Vishay | Trans MOSFET N-CH 500V 3.1A 3-Pin(3+Tab) TO-220FP |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI830GPBF | Hersteller : VISHAY |
Description: VISHAY - IRFI830GPBF - Leistungs-MOSFET, n-Kanal, 500 V, 3.1 A, 1.5 ohm, TO-220FP, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 500V rohsCompliant: YES Dauer-Drainstrom Id: 3.1A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 32W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.5ohm |
auf Bestellung 683 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI830GPBF | Hersteller : Vishay | Trans MOSFET N-CH 500V 3.1A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |