Produkte > VISHAY > IRFIB7N50LPBF
IRFIB7N50LPBF

IRFIB7N50LPBF Vishay


91177.pdf Hersteller: Vishay
Trans MOSFET N-CH 500V 6.8A 3-Pin(3+Tab) TO-220 Full-Pak
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IRFIB7N50LPBF Vishay

Description: MOSFET N-CH 500V 6.8A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 4.1A, 10V, Power Dissipation (Max): 46W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V.

Weitere Produktangebote IRFIB7N50LPBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRFIB7N50LPBF IRFIB7N50LPBF Hersteller : Vishay Siliconix IRFIB7N50L%2CSiHFIB7N50L.pdf Description: MOSFET N-CH 500V 6.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.1A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Produkt ist nicht verfügbar