IRFIBE20GPBF

IRFIBE20GPBF

IRFIBE20GPBF

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 1.4A TO220-3
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 840mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V

91183.pdf
verfügbar/auf Bestellung
auf Bestellung 38 Stücke
Lieferzeit 21-28 Tag (e)

4+ 7.49 EUR
10+ 6.72 EUR

Technische Details IRFIBE20GPBF

Description: MOSFET N-CH 800V 1.4A TO220-3, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 6.5Ohm @ 840mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V.

Preis IRFIBE20GPBF ab 5.38 EUR bis 7.62 EUR

IRFIBE20GPBF
IRFIBE20GPBF
Hersteller: Vishay Semiconductors
MOSFET 800V N-CH HEXFET
91183-1768509.pdf
auf Bestellung 1000 Stücke
Lieferzeit 14-28 Tag (e)
7+ 7.62 EUR
10+ 6.86 EUR
25+ 6.47 EUR
100+ 5.38 EUR
IRFIBE20GPBF
Hersteller: VISHAY

91183.pdf
1000 Stücke
IRFIBE20GPBF
IRFIBE20GPBF
Hersteller: Vishay / Siliconix
MOSFET N-CH 800V HEXFET MOSFET
91183-21926.pdf
auf Bestellung 277 Stücke
Lieferzeit 14-28 Tag (e)