auf Bestellung 1485 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 8.42 EUR |
| 10+ | 7.07 EUR |
| 25+ | 5.56 EUR |
| 100+ | 5.02 EUR |
| 250+ | 4.89 EUR |
| 500+ | 4.65 EUR |
| 1000+ | 4.24 EUR |
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Technische Details IRFIBF30GPBF Vishay Semiconductors
Description: MOSFET N-CH 900V 1.9A TO220-3, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.1A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote IRFIBF30GPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRFIBF30GPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 900V 1.9A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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IRFIBF30GPBF | Hersteller : Vishay |
Trans MOSFET N-CH 900V 1.9A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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IRFIBF30GPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.2A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.2A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.7Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFIBF30GPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 900V 1.9A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 1.1A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFIBF30GPBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.2A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.2A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.7Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |