IRFL110PBF Vishay/IR
Hersteller: Vishay/IRN-канальний ПТ; Udss, В = 100; Id = 1,5 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 180 @ 25; Qg, нКл = 8,3 @ 10 В; Rds = 540 мОм @ 900 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; Ptot2, Вт = 3,1; SOT-223
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 3.06 EUR |
| 10+ | 2.64 EUR |
| 100+ | 2.32 EUR |
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Technische Details IRFL110PBF Vishay/IR
Description: MOSFET N-CH 100V 1.5A SOT223, Packaging: Tube, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote IRFL110PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFL110PBF Produktcode: 23062 |
Hersteller : Vishay |
Transistoren > MOSFET N-CH Gehäuse: SOT-223 Uds,V: 100 Idd,A: 01.05.2015 Rds(on), Ohm: 0.54 Ciss, pF/Qg, nC: 03.08.180 JHGF: SMD |
Produkt ist nicht verfügbar
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IRFL110PBF | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 |
Produkt ist nicht verfügbar |
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IRFL110PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.5A SOT223 Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
Produkt ist nicht verfügbar |