IRFL110TRPBF-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.82 EUR |
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Technische Details IRFL110TRPBF-BE3 Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.
Weitere Produktangebote IRFL110TRPBF-BE3 nach Preis ab 0.92 EUR bis 2.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRFL110TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1985 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL110TRPBF-BE3 | Hersteller : Vishay / Siliconix |
MOSFET 100V N-CH HEXFET |
auf Bestellung 50940 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFL110TRPBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.5A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V |
auf Bestellung 3924 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFL110TRPBF-BE3 | Hersteller : VISHAY |
Description: VISHAY - IRFL110TRPBF-BE3 - MOSFET, N-CH, 100V, 1.5A, SOT-223 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: YES Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: 0 MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 0 euEccn: NLR Verlustleistung: 0 Bauform - Transistor: SOT-223 Anzahl der Pins: 0 Produktpalette: IRFL110 Series productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: Lead |
auf Bestellung 1985 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL110TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| IRFL110TRPBF-BE3 | Hersteller : Vishay |
Surface Mount Power MOSFET |
Produkt ist nicht verfügbar |