auf Bestellung 8455 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 1.98 EUR |
| 32+ | 1.67 EUR |
| 100+ | 1.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFL210TRPBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 960MA SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 960mA (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.
Weitere Produktangebote IRFL210TRPBF-BE3 nach Preis ab 0.89 EUR bis 2.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFL210TRPBF-BE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 200V 960MA SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 960mA (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
auf Bestellung 2273 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||
 |
IRFL210TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 0.96A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| IRFL210TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 200V 0.96A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
||||||||||||||
| IRFL210TRPBF-BE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 960mA; Idm: 7.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.96A Pulsed drain current: 7.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
IRFL210TRPBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 960MA SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 960mA (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||
| IRFL210TRPBF-BE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 960mA; Idm: 7.7A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.96A Pulsed drain current: 7.7A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |