IRFL4105 International Rectifier Corporation
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Technische Details IRFL4105 International Rectifier Corporation
Description: MOSFET N-CH 55V 3.7A SOT223, Packaging: Tube, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V.
Weitere Produktangebote IRFL4105
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IRFL4105 Produktcode: 32875 |
Hersteller : IR |
 Transistoren > MOSFET N-CHGehäuse: SOT-223 Uds,V: 55 Idd,A: 03.07.2015 Rds(on), Ohm: 0.045 Ciss, pF/Qg, nC: 660/35 JHGF: SMD |
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IRFL4105 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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IRFL4105 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 3.7A SOT223 Packaging: Tube Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.7A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
Produkt ist nicht verfügbar |