IRFL4310PBF International Rectifier/Infineon


irfl4310pbf.pdf?fileId=5546d462533600a40153562804ba1fbc Hersteller: International Rectifier/Infineon
N-канальний ПТ; Udss, В = 100; Id = 1,6 A; Ptot, Вт = 2,1; Тип монт. = smd; Rds = 200 мОм; Tексп, °C = -55...+150; Ugs(th) = 2...4; Pb-free; SOT-223
auf Bestellung 76 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+0.68 EUR
11+ 0.58 EUR
100+ 0.51 EUR
Mindestbestellmenge: 10
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Technische Details IRFL4310PBF International Rectifier/Infineon

Description: MOSFET N-CH 100V SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Power Dissipation (Max): 1W (Ta), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V.

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IRFL4310PBF IRFL4310PBF Hersteller : International Rectifier HiRel Products infineon-irfl4310-datasheet-v01_01-en.pdf Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 Tube
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IRFL4310PBF IRFL4310PBF Hersteller : Infineon Technologies irfl4310pbf.pdf?fileId=5546d462533600a40153562804ba1fbc Description: MOSFET N-CH 100V SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Power Dissipation (Max): 1W (Ta)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
IRFL4310PBF IRFL4310PBF Hersteller : Infineon Technologies irfl4310pbf.pdf?fileId=5546d462533600a40153562804ba1fbc Description: MOSFET N-CH 100V SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Power Dissipation (Max): 1W (Ta)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
IRFL4310PBF IRFL4310PBF Hersteller : Infineon Technologies Infineon_IRFL4310_DataSheet_v01_01_EN-1732606.pdf MOSFET 100V 1 N-CH HEXFET PWR MOSFET200mOhms
Produkt ist nicht verfügbar
IRFL4310PBF IRFL4310PBF Hersteller : Infineon (IRF) irfl4310.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Produkt ist nicht verfügbar