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IRFM210BTF-FP001

IRFM210BTF-FP001 ON Semiconductor


irfm210b.pdf Hersteller: ON Semiconductor
Trans MOSFET N-CH 200V 0.77A 4-Pin(3+Tab) SOT-223 T/R
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Technische Details IRFM210BTF-FP001 ON Semiconductor

Description: MOSFET N-CH 200V 770MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 770mA (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 390mA, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V.

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IRFM210BTF_FP001 IRFM210BTF_FP001 Hersteller : onsemi IRFM210B.pdf Description: MOSFET N-CH 200V 770MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 770mA (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 390mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
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IRFM210BTF_FP001 IRFM210BTF_FP001 Hersteller : onsemi / Fairchild fairchild_semiconductor_ma04a-1191547.pdf MOSFET 200V Single
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